- 24 May 2023
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FeRAM: Innovative alternative to EEPROM
FeRAM (Ferroelectric RAM)
FeRAM (ferroelectric RAM) is a type of non-volatile RAM (random access memory). The FeRAM is characterized by a particularly high data retention, i.e.: even at 125°C, the data is retained for over 10 years if the power supply is interrupted.
It is named after the ferroelectric dielectric of the capacitor. We will briefly discuss this at the end of the article in the context of how this storage technology works. First, however, we will take a look at the most important properties and some areas of application for the technology.
Table of contents
Features of the FeRAM
One of the advantages of FeRAM over DRAM, for example, is that FeRAM does not require a power supply for data retention and thus does not consume power between read and write processes. It is also compatible with the common EEPROM (Electrically Erasable Programmable Read-Only Memory), while being more reliable and faster.
In the following, we summarize the main features of the memory technology for you. Due to the relatively high price of FeRAM, in our experience at least one of these features is necessary when deciding to use it in a project.
FeRAM consumes less energy during writing and erasing than many other non-volatile memory technologies. On the one hand, this is due to the fact that FeRAM offers the possibility of writing individual bits independently, while other technologies usually write entire blocks (or pages). In these technologies, data is first collected and then written in blocks cyclically to minimize power consumption. The process of “waking up" (so called wakeup) and writing an entire block can be relatively slow and therefore consume more power. In comparison, FeRAM can store individual bits in memory without the overhead of writing blocks, resulting in a faster write process and lower power consumption.
This difference allows FeRAM to write more frequently with lower power consumption because it does not have to wait for the wake-up process and the block write operation. The ability to write single bits is one of FeRAM's strengths and contributes to its efficiency and low power requirements.
FeRAM offers an extremely high number of write and erase cycles (up to 1013 or more) compared to e.g. flash memories or EEPROM (typically 103 to 106 ). This results in a longer lifetime of the FeRAM. This makes it ideal for applications that require frequent write operations.
Unlike some magnetoresistive memory technologies such as MRAM, FeRAM is insensitive to magnetic fields. This means that the information stored in FeRAM is not lost or damaged when exposed to magnetic fields. The medical sector in particular also appreciates FeRAM's immunity to x-ray radiation (x-Ray Immunity).
FeRAM uses ferroelectric materials (e.g. PZT - lead zirconate titanate) for its memory cells. These materials can change their polarization to store information and maintain their state even when the power is turned off. More about this can be found in the section "Functionality of the FeRAM".
Areas of application for FeRAM
A brief note in advance: Whether the use of FeRAM is recommended for certain applications cannot be said in general terms and always depends on a large number of application-specific factors. With the following information on the suitability of FeRAM for various application areas, we therefore do not want to make any purchase recommendations, but rather put the properties of FeRAM memory technology into context.
In summary, FeRAM is characterized by low power consumption, high number of write cycles, magnetic field as well as X-ray immunity, the use of ferroelectric material and easy integration. These properties make FeRAM suitable for a wide range of applications. In the following we give some examples.
FeRAM is well suited for industrial control systems because it can store data quickly and reliably, even in the event of sudden power failures or other disturbances. This helps improve system performance and stability.
The properties of FeRAM make it an attractive choice for numerous measuring devices, including water meters, for example. For regulatory reasons, these often have to operate maintenance-free for several years, which means they have to work reliably even without battery replacement. Here, the low power consumption and high number of write cycles offered by FeRAM prove to be particularly advantageous. In addition, FeRAM captures large amounts of data in smart meter applications, such as information on energy consumption. In this context, the comparatively high write speed of FeRAM is also an important factor.
FeRAM is often the preferred choice for applications where it must be ensured that the last information is retained before an unexpected shutdown. This is the case, for example, with airbags in cars or the so-called black boxes (flight recorders) in aircraft. The non-volatile nature of FeRAM means that data is retained even without power, making it ideal for such critical applications. Although alternative non-volatile memory solutions exist, FeRAM offers additional advantages such as high write speed and a large number of write cycles, which often make it the best choice for these applications.
In the medical field, FeRAM is advantageous due to its properties, including its immunity to X-rays, and is already widely used. Medical devices such as pacemakers and insulin pumps use FeRAM to store critical patient data and device settings. In this context, FeRAM's fast write speeds and long lifetime can support the safe and reliable storage of this information. In addition, devices that use energy harvesting - operating without auxiliary power - could benefit from FeRAM's low energy consumption. These devices could harvest energy from sources such as motion or body temperature, and FeRAM's low energy requirements could help ensure that this energy is sufficient to power the device.
Functionality of the FeRAM
In essence, the FeRAM, like the DRAM, consists of many memory cells, each of which in turn consists of a capacitor and a transistor. However, the capacitor in the FeRAM is not a conventional capacitor, but a capacitor with a ferroelectric dielectric, so that the leakage currents that occur in the DRAM do not occur.
How is the information stored in the FeRAM?By applying an electric field, a distinguishable and changeable electric polarization state is reached. Through this the information to be stored is stored on the capacitor: as always it is either charged (e.g.: logic-1) or discharged (e.g.: logic-0). Here the FeRAM does not distinguish between read and write process. The information to be stored is also lost during the read process, so that the capacitor must be rewritten.
Quellen
- Electronics Compendium (FeRAM - https://www.elektronik-kompendium.de/sites/com/0610041.htm)
- Fujitsu: https://www.fujitsu.com/global/products/devices/semiconductor/memory/FeRAM/
- "Ferroelectric random access memories: Fundamentals and applications" von H. Ishiwara, Y. Fujisaki und H. Yano: https://www.springer.com/gp/book/9783540403963
- "High Temperature Data Retention of Ferroelectric Memory on 130nm and 180nm CMOS," von J. A. Rodriguez et al., doi: 10.1109/IMW.2016.7495274
- Ramtron (now part of Cypress Semiconductor): https://www.cypress.com/products/serial-FeRAM
- Wikipedia EN (FeRAM - https://de.wikipedia.org/wiki/Ferroelectric_Random_Access_Memory )
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